ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON

MO DANG; LU YIN-CHENG; LI DAN-HUI; LIU SHANG-HE; LU WU-XING

doi:10.7498/aps.29.1214

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MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING. ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICONJ. Acta Physica Sinica, 1980, 29(9): 1214-1216. DOI: 10.7498/aps.29.1214

Citation:

MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING. ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICONJ. Acta Physica Sinica, 1980, 29(9): 1214-1216. DOI: 10.7498/aps.29.1214

Citation:

MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING. ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICONJ. Acta Physica Sinica, 1980, 29(9): 1214-1216. DOI: 10.7498/aps.29.1214