MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN

JIANG BAI-LIN; SHENG SHI-XIONG; XIAO ZHI-GANG; BAO JIAN-YING

doi:10.7498/aps.29.1283

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JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING. MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGENJ. Acta Physica Sinica, 1980, 29(10): 1283-1292. DOI: 10.7498/aps.29.1283

Citation:

JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING. MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGENJ. Acta Physica Sinica, 1980, 29(10): 1283-1292. DOI: 10.7498/aps.29.1283

Citation:

JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING. MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGENJ. Acta Physica Sinica, 1980, 29(10): 1283-1292. DOI: 10.7498/aps.29.1283