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中国物理学会期刊
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XIA RI-YUAN. IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATIONJ. Acta Physica Sinica, 1980, 29(5): 566-576. DOI: 10.7498/aps.29.566
Citation: XIA RI-YUAN. IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATIONJ. Acta Physica Sinica, 1980, 29(5): 566-576. DOI: 10.7498/aps.29.566
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IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION

Acta Phys. Sin., 1980, 29(5): 566-576.
DOI: 10.7498/aps.29.566
CSTR: 32037.14.aps.29.566
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