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中国物理学会期刊
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LI YUAN-HENG. DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALINGJ. Acta Physica Sinica, 1981, 30(4): 542-544. DOI: 10.7498/aps.30.542
Citation: LI YUAN-HENG. DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALINGJ. Acta Physica Sinica, 1981, 30(4): 542-544. DOI: 10.7498/aps.30.542
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DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALING

Acta Phys. Sin., 1981, 30(4): 542-544.
DOI: 10.7498/aps.30.542
CSTR: 32037.14.aps.30.542
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