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中国物理学会期刊
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GUO CHANG-LIN. OBSERVATION OF DEFECTS IN β-SILICON CARBIDE EPITAXIAL FILMJ. Acta Physica Sinica, 1982, 31(11): 1526-1533. DOI: 10.7498/aps.31.1526
Citation: GUO CHANG-LIN. OBSERVATION OF DEFECTS IN β-SILICON CARBIDE EPITAXIAL FILMJ. Acta Physica Sinica, 1982, 31(11): 1526-1533. DOI: 10.7498/aps.31.1526
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OBSERVATION OF DEFECTS IN β-SILICON CARBIDE EPITAXIAL FILM

Acta Phys. Sin., 1982, 31(11): 1526-1533.
DOI: 10.7498/aps.31.1526
CSTR: 32037.14.aps.31.1526
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