INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN

YANG CHUAN-ZHENG; ZHU JIAN-SHENG

doi:10.7498/aps.31.278

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YANG CHUAN-ZHENG, ZHU JIAN-SHENG. INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGENJ. Acta Physica Sinica, 1982, 31(3): 278-284. DOI: 10.7498/aps.31.278

Citation:

YANG CHUAN-ZHENG, ZHU JIAN-SHENG. INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGENJ. Acta Physica Sinica, 1982, 31(3): 278-284. DOI: 10.7498/aps.31.278

Citation:

YANG CHUAN-ZHENG, ZHU JIAN-SHENG. INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGENJ. Acta Physica Sinica, 1982, 31(3): 278-284. DOI: 10.7498/aps.31.278