USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42

BAO QING-CHENG; WANG QI-MING; PENG HUAI-DE; ZHU LONG-DE; GAO JI-LIN

doi:10.7498/aps.32.1220

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BAO QING-CHENG, WANG QI-MING, PENG HUAI-DE, ZHU LONG-DE, GAO JI-LIN. USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42J. Acta Physica Sinica, 1983, 32(9): 1220-1226. DOI: 10.7498/aps.32.1220

Citation:

BAO QING-CHENG, WANG QI-MING, PENG HUAI-DE, ZHU LONG-DE, GAO JI-LIN. USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42J. Acta Physica Sinica, 1983, 32(9): 1220-1226. DOI: 10.7498/aps.32.1220

Citation:

BAO QING-CHENG, WANG QI-MING, PENG HUAI-DE, ZHU LONG-DE, GAO JI-LIN. USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42J. Acta Physica Sinica, 1983, 32(9): 1220-1226. DOI: 10.7498/aps.32.1220