A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESS

YAO XIU-CHEN; QIN GUO-GANG; ZENG SHU-RONG; YUAN MIN-HUA

doi:10.7498/aps.33.377

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YAO XIU-CHEN, QIN GUO-GANG, ZENG SHU-RONG, YUAN MIN-HUA. A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESSJ. Acta Physica Sinica, 1984, 33(3): 377-390. DOI: 10.7498/aps.33.377

Citation:

YAO XIU-CHEN, QIN GUO-GANG, ZENG SHU-RONG, YUAN MIN-HUA. A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESSJ. Acta Physica Sinica, 1984, 33(3): 377-390. DOI: 10.7498/aps.33.377

Citation:

YAO XIU-CHEN, QIN GUO-GANG, ZENG SHU-RONG, YUAN MIN-HUA. A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESSJ. Acta Physica Sinica, 1984, 33(3): 377-390. DOI: 10.7498/aps.33.377