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中国物理学会期刊
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HE XIAN-CHANG. EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALSJ. Acta Physica Sinica, 1984, 33(5): 694-695. DOI: 10.7498/aps.33.694
Citation: HE XIAN-CHANG. EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALSJ. Acta Physica Sinica, 1984, 33(5): 694-695. DOI: 10.7498/aps.33.694
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EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS

Acta Phys. Sin., 1984, 33(5): 694-695.
DOI: 10.7498/aps.33.694
CSTR: 32037.14.aps.33.694
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