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中国物理学会期刊
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GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTALJ. Acta Physica Sinica, 1984, 33(6): 840-844. DOI: 10.7498/aps.33.840
Citation: GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTALJ. Acta Physica Sinica, 1984, 33(6): 840-844. DOI: 10.7498/aps.33.840
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TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL

Acta Phys. Sin., 1984, 33(6): 840-844.
DOI: 10.7498/aps.33.840
CSTR: 32037.14.aps.33.840
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