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中国物理学会期刊
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LU YU-ZENG, Y. C. CHENG. A NEW MODEL FOR THE GROWTH OF SILICON DIOXIDE LAYERSJ. Acta Physica Sinica, 1985, 34(4): 447-454. DOI: 10.7498/aps.34.447
Citation: LU YU-ZENG, Y. C. CHENG. A NEW MODEL FOR THE GROWTH OF SILICON DIOXIDE LAYERSJ. Acta Physica Sinica, 1985, 34(4): 447-454. DOI: 10.7498/aps.34.447
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A NEW MODEL FOR THE GROWTH OF SILICON DIOXIDE LAYERS

Acta Phys. Sin., 1985, 34(4): 447-454.
DOI: 10.7498/aps.34.447
CSTR: 32037.14.aps.34.447
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