STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPY

Zhang Fang-qing; Xu Xi-xiang; Chen Guang-hua; Jiang Zhi-chen; Chen Zhen-shi; Qi Shang-kui

doi:10.7498/aps.35.1253

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Zhang Fang-qing, Xu Xi-xiang, Chen Guang-hua, Jiang Zhi-chen, Chen Zhen-shi, Qi Shang-kui. STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPYJ. Acta Physica Sinica, 1986, 35(9): 1253-1258. DOI: 10.7498/aps.35.1253

Citation:

Zhang Fang-qing, Xu Xi-xiang, Chen Guang-hua, Jiang Zhi-chen, Chen Zhen-shi, Qi Shang-kui. STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPYJ. Acta Physica Sinica, 1986, 35(9): 1253-1258. DOI: 10.7498/aps.35.1253

Citation:

Zhang Fang-qing, Xu Xi-xiang, Chen Guang-hua, Jiang Zhi-chen, Chen Zhen-shi, Qi Shang-kui. STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPYJ. Acta Physica Sinica, 1986, 35(9): 1253-1258. DOI: 10.7498/aps.35.1253