THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)

HU YONG-JUN; LIN ZHANG-DA; WANG CHANG-HENG; XIE KAN

doi:10.7498/aps.35.50

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HU YONG-JUN, LIN ZHANG-DA, WANG CHANG-HENG, XIE KAN. THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)J. Acta Physica Sinica, 1986, 35(1): 50-57. DOI: 10.7498/aps.35.50

Citation:

HU YONG-JUN, LIN ZHANG-DA, WANG CHANG-HENG, XIE KAN. THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)J. Acta Physica Sinica, 1986, 35(1): 50-57. DOI: 10.7498/aps.35.50

Citation:

HU YONG-JUN, LIN ZHANG-DA, WANG CHANG-HENG, XIE KAN. THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)J. Acta Physica Sinica, 1986, 35(1): 50-57. DOI: 10.7498/aps.35.50