A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS

WU FENG-MEI; LAI QI-JI; SHEN BO; ZHOU GUO-QUAN

doi:10.7498/aps.35.638

WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN. A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERSJ. Acta Physica Sinica, 1986, 35(5): 638-642. DOI: 10.7498/aps.35.638

Citation:

WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN. A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERSJ. Acta Physica Sinica, 1986, 35(5): 638-642. DOI: 10.7498/aps.35.638

Citation:

WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN. A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERSJ. Acta Physica Sinica, 1986, 35(5): 638-642. DOI: 10.7498/aps.35.638