ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL

MAO DE-QIANG; REN SHANG-YUAN; LI MING-FU

doi:10.7498/aps.35.808

Search

x

MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODELJ. Acta Physica Sinica, 1986, 35(6): 808-811. DOI: 10.7498/aps.35.808

Citation:

MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODELJ. Acta Physica Sinica, 1986, 35(6): 808-811. DOI: 10.7498/aps.35.808

Citation:

MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODELJ. Acta Physica Sinica, 1986, 35(6): 808-811. DOI: 10.7498/aps.35.808