INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

DU YONG-CHANG; YAN MAO-XUN; ZHANG YU-FENG; GUO HAI; HU KE-LIANG

doi:10.7498/aps.36.1427

Search

x

DU YONG-CHANG, YAN MAO-XUN, ZHANG YU-FENG, GUO HAI, HU KE-LIANG. INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTONJ. Acta Physica Sinica, 1987, 36(11): 1427-1432. DOI: 10.7498/aps.36.1427

Citation:

DU YONG-CHANG, YAN MAO-XUN, ZHANG YU-FENG, GUO HAI, HU KE-LIANG. INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTONJ. Acta Physica Sinica, 1987, 36(11): 1427-1432. DOI: 10.7498/aps.36.1427

Citation:

DU YONG-CHANG, YAN MAO-XUN, ZHANG YU-FENG, GUO HAI, HU KE-LIANG. INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTONJ. Acta Physica Sinica, 1987, 36(11): 1427-1432. DOI: 10.7498/aps.36.1427