STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION

LU FANG; SUN HENG-HUI; HUANG YUN; SHENG CHI; ZHANG ZENG-GUANG; WANG LIANG

doi:10.7498/aps.36.745

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LU FANG, SUN HENG-HUI, HUANG YUN, SHENG CHI, ZHANG ZENG-GUANG, WANG LIANG. STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATIONJ. Acta Physica Sinica, 1987, 36(6): 745-751. DOI: 10.7498/aps.36.745

Citation:

LU FANG, SUN HENG-HUI, HUANG YUN, SHENG CHI, ZHANG ZENG-GUANG, WANG LIANG. STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATIONJ. Acta Physica Sinica, 1987, 36(6): 745-751. DOI: 10.7498/aps.36.745

Citation:

LU FANG, SUN HENG-HUI, HUANG YUN, SHENG CHI, ZHANG ZENG-GUANG, WANG LIANG. STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATIONJ. Acta Physica Sinica, 1987, 36(6): 745-751. DOI: 10.7498/aps.36.745