LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

ZHOU GUO-LIANG; CHEN KE-MING; TIAN LIANG-GUANG

doi:10.7498/aps.37.1607

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ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1988, 37(10): 1607-1612. DOI: 10.7498/aps.37.1607

Citation:

ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1988, 37(10): 1607-1612. DOI: 10.7498/aps.37.1607

Citation:

ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1988, 37(10): 1607-1612. DOI: 10.7498/aps.37.1607