INVESTIGATION OF THE ANOMALOUS HALL EFFECT IN n-Ge AT ROOM TEMPERATURE BY THE INVERSION LAYERS MODEL

XING XU; JIANG WEI; WANG XI-FU

doi:10.7498/aps.38.1210

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XING XU, JIANG WEI, WANG XI-FU. INVESTIGATION OF THE ANOMALOUS HALL EFFECT IN n-Ge AT ROOM TEMPERATURE BY THE INVERSION LAYERS MODELJ. Acta Physica Sinica, 1989, 38(7): 1210-1214. DOI: 10.7498/aps.38.1210

Citation:

XING XU, JIANG WEI, WANG XI-FU. INVESTIGATION OF THE ANOMALOUS HALL EFFECT IN n-Ge AT ROOM TEMPERATURE BY THE INVERSION LAYERS MODELJ. Acta Physica Sinica, 1989, 38(7): 1210-1214. DOI: 10.7498/aps.38.1210

Citation:

XING XU, JIANG WEI, WANG XI-FU. INVESTIGATION OF THE ANOMALOUS HALL EFFECT IN n-Ge AT ROOM TEMPERATURE BY THE INVERSION LAYERS MODELJ. Acta Physica Sinica, 1989, 38(7): 1210-1214. DOI: 10.7498/aps.38.1210