SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONS

LU WU-XING; QIAN YA-HONG; TIAN REN-HE; WANG ZHONG-LIE

doi:10.7498/aps.39.254

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LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE. SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONSJ. Acta Physica Sinica, 1990, 39(2): 254-260. DOI: 10.7498/aps.39.254

Citation:

LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE. SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONSJ. Acta Physica Sinica, 1990, 39(2): 254-260. DOI: 10.7498/aps.39.254

Citation:

LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE. SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONSJ. Acta Physica Sinica, 1990, 39(2): 254-260. DOI: 10.7498/aps.39.254