A STUDY ON THE PHYSICAL PROCESS OF INDIUM IMPLANTATION BY PULSE LASER AND THE DEFECT PROPERTIES IN n TYPE SILICON

LIU KAI-FENG; CAI JING; SUN HENG-HUI; RUN YUN-ZHU; CAO YONG-MING

doi:10.7498/aps.39.88

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LIU KAI-FENG, CAI JING, SUN HENG-HUI, RUN YUN-ZHU, CAO YONG-MING. A STUDY ON THE PHYSICAL PROCESS OF INDIUM IMPLANTATION BY PULSE LASER AND THE DEFECT PROPERTIES IN n TYPE SILICONJ. Acta Physica Sinica, 1990, 39(7): 88-94. DOI: 10.7498/aps.39.88

Citation:

LIU KAI-FENG, CAI JING, SUN HENG-HUI, RUN YUN-ZHU, CAO YONG-MING. A STUDY ON THE PHYSICAL PROCESS OF INDIUM IMPLANTATION BY PULSE LASER AND THE DEFECT PROPERTIES IN n TYPE SILICONJ. Acta Physica Sinica, 1990, 39(7): 88-94. DOI: 10.7498/aps.39.88

Citation:

LIU KAI-FENG, CAI JING, SUN HENG-HUI, RUN YUN-ZHU, CAO YONG-MING. A STUDY ON THE PHYSICAL PROCESS OF INDIUM IMPLANTATION BY PULSE LASER AND THE DEFECT PROPERTIES IN n TYPE SILICONJ. Acta Physica Sinica, 1990, 39(7): 88-94. DOI: 10.7498/aps.39.88