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中国物理学会期刊
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SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG. INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InPJ. Acta Physica Sinica, 1991, 40(3): 476-482. DOI: 10.7498/aps.40.476
Citation: SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG. INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InPJ. Acta Physica Sinica, 1991, 40(3): 476-482. DOI: 10.7498/aps.40.476
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INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP

Acta Phys. Sin., 1991, 40(3): 476-482.
DOI: 10.7498/aps.40.476
CSTR: 32037.14.aps.40.476
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