THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAs

CHENG WEN-QIN; MEI XIAO-BING; LIU SHUANC; LIU YU-LONG; LI YONG-KANG; ZHOU JUN-MING

doi:10.7498/aps.41.1032

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CHENG WEN-QIN, MEI XIAO-BING, LIU SHUANC, LIU YU-LONG, LI YONG-KANG, ZHOU JUN-MING. THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAsJ. Acta Physica Sinica, 1992, 41(6): 1032-1035. DOI: 10.7498/aps.41.1032

Citation:

CHENG WEN-QIN, MEI XIAO-BING, LIU SHUANC, LIU YU-LONG, LI YONG-KANG, ZHOU JUN-MING. THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAsJ. Acta Physica Sinica, 1992, 41(6): 1032-1035. DOI: 10.7498/aps.41.1032

Citation:

CHENG WEN-QIN, MEI XIAO-BING, LIU SHUANC, LIU YU-LONG, LI YONG-KANG, ZHOU JUN-MING. THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAsJ. Acta Physica Sinica, 1992, 41(6): 1032-1035. DOI: 10.7498/aps.41.1032