DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTURE

CHEN KAI-MAO; WU LAN-QING; PENG QING-ZHI; LIU HONG-FEI

doi:10.7498/aps.41.1870

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CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI. DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTUREJ. Acta Physica Sinica, 1992, 41(11): 1870-1879. DOI: 10.7498/aps.41.1870

Citation:

CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI. DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTUREJ. Acta Physica Sinica, 1992, 41(11): 1870-1879. DOI: 10.7498/aps.41.1870

Citation:

CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI. DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTUREJ. Acta Physica Sinica, 1992, 41(11): 1870-1879. DOI: 10.7498/aps.41.1870