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中国物理学会期刊
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LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG. STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICONJ. Acta Physica Sinica, 1992, 41(6): 985-991. DOI: 10.7498/aps.41.985
Citation: LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG. STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICONJ. Acta Physica Sinica, 1992, 41(6): 985-991. DOI: 10.7498/aps.41.985
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STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON

Acta Phys. Sin., 1992, 41(6): 985-991.
DOI: 10.7498/aps.41.985
CSTR: 32037.14.aps.41.985
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