MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES

ZHOU GUO-LIANG; SHENG CHI; FAN YONG-LIANG; JIANG WEI-DONG; YU MING-RBN

doi:10.7498/aps.42.1121-2

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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICESJ. Acta Physica Sinica, 1993, 42(7): 1121-1128. DOI: 10.7498/aps.42.1121-2

Citation:

ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICESJ. Acta Physica Sinica, 1993, 42(7): 1121-1128. DOI: 10.7498/aps.42.1121-2

Citation:

ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICESJ. Acta Physica Sinica, 1993, 42(7): 1121-1128. DOI: 10.7498/aps.42.1121-2