VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY

LI XIAN-HUANG; LU FANG; SUN HENG-HUI

doi:10.7498/aps.42.1153

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LI XIAN-HUANG, LU FANG, SUN HENG-HUI. VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPYJ. Acta Physica Sinica, 1993, 42(7): 1153-1159. DOI: 10.7498/aps.42.1153

Citation:

LI XIAN-HUANG, LU FANG, SUN HENG-HUI. VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPYJ. Acta Physica Sinica, 1993, 42(7): 1153-1159. DOI: 10.7498/aps.42.1153

Citation:

LI XIAN-HUANG, LU FANG, SUN HENG-HUI. VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPYJ. Acta Physica Sinica, 1993, 42(7): 1153-1159. DOI: 10.7498/aps.42.1153