TUNABLE-SAMPLING-DEPTH ELECTRON ENERGY LOSS SPECTROSCOPY STUDIES OF Sn/Si INTERFACE

GAO SHAN-HU; ZHANG YUN; XUN KUN; ZHAO RU-GUANG; YANG WEI-SHENG

doi:10.7498/aps.42.1290

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GAO SHAN-HU, ZHANG YUN, XUN KUN, ZHAO RU-GUANG, YANG WEI-SHENG. TUNABLE-SAMPLING-DEPTH ELECTRON ENERGY LOSS SPECTROSCOPY STUDIES OF Sn/Si INTERFACEJ. Acta Physica Sinica, 1993, 42(8): 1290-1296. DOI: 10.7498/aps.42.1290

Citation:

GAO SHAN-HU, ZHANG YUN, XUN KUN, ZHAO RU-GUANG, YANG WEI-SHENG. TUNABLE-SAMPLING-DEPTH ELECTRON ENERGY LOSS SPECTROSCOPY STUDIES OF Sn/Si INTERFACEJ. Acta Physica Sinica, 1993, 42(8): 1290-1296. DOI: 10.7498/aps.42.1290

Citation:

GAO SHAN-HU, ZHANG YUN, XUN KUN, ZHAO RU-GUANG, YANG WEI-SHENG. TUNABLE-SAMPLING-DEPTH ELECTRON ENERGY LOSS SPECTROSCOPY STUDIES OF Sn/Si INTERFACEJ. Acta Physica Sinica, 1993, 42(8): 1290-1296. DOI: 10.7498/aps.42.1290