MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs

QI MING; J. SHIRAKASHI; E. TOKUMITSU; S. NOZAKI; M. KONAGAI; K. TAKAHASHI; LUO JIN-SHENG

doi:10.7498/aps.42.1956

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QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG. MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAsJ. Acta Physica Sinica, 1993, 42(12): 1956-1962. DOI: 10.7498/aps.42.1956

Citation:

QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG. MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAsJ. Acta Physica Sinica, 1993, 42(12): 1956-1962. DOI: 10.7498/aps.42.1956

Citation:

QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG. MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAsJ. Acta Physica Sinica, 1993, 42(12): 1956-1962. DOI: 10.7498/aps.42.1956