WEI XING, GONG DA-WEI, YANG XIAO-PING, LU HONG-QIANG, CUI QIAN, SHENG CHI, ZHANG XIANG-JIU, WANG XUN, WANG QIN-HUA, LU FANG, SUN HENG-HUI. ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATEJ. Acta Physica Sinica, 1993, 42(12): 1968-1973. DOI: 10.7498/aps.42.1968
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Citation:
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WEI XING, GONG DA-WEI, YANG XIAO-PING, LU HONG-QIANG, CUI QIAN, SHENG CHI, ZHANG XIANG-JIU, WANG XUN, WANG QIN-HUA, LU FANG, SUN HENG-HUI. ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATEJ. Acta Physica Sinica, 1993, 42(12): 1968-1973. DOI: 10.7498/aps.42.1968
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WEI XING, GONG DA-WEI, YANG XIAO-PING, LU HONG-QIANG, CUI QIAN, SHENG CHI, ZHANG XIANG-JIU, WANG XUN, WANG QIN-HUA, LU FANG, SUN HENG-HUI. ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATEJ. Acta Physica Sinica, 1993, 42(12): 1968-1973. DOI: 10.7498/aps.42.1968
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Citation:
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WEI XING, GONG DA-WEI, YANG XIAO-PING, LU HONG-QIANG, CUI QIAN, SHENG CHI, ZHANG XIANG-JIU, WANG XUN, WANG QIN-HUA, LU FANG, SUN HENG-HUI. ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATEJ. Acta Physica Sinica, 1993, 42(12): 1968-1973. DOI: 10.7498/aps.42.1968
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