LI DAI-QING, GONG BAO-AN, WAN YA, ZHU PEI-RAN, ZHOU JUN-SI, XU TIAN-BING, MU SHAN-MING, ZHAO QING-TAI, WANG ZHONG-LIE. STUDIES OF LATTICE DAMAGE CAUSED BY 1MeV Si+ IMPLANTATION INTO Al0.3Ga0.7As/GaAs SUPERLATTICES AND GaAs AT ELEVATED SUBSTRATE TEMPERATUREJ. Acta Physica Sinica, 1994, 43(8): 1311-1317. DOI: 10.7498/aps.43.1311
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Citation:
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LI DAI-QING, GONG BAO-AN, WAN YA, ZHU PEI-RAN, ZHOU JUN-SI, XU TIAN-BING, MU SHAN-MING, ZHAO QING-TAI, WANG ZHONG-LIE. STUDIES OF LATTICE DAMAGE CAUSED BY 1MeV Si+ IMPLANTATION INTO Al0.3Ga0.7As/GaAs SUPERLATTICES AND GaAs AT ELEVATED SUBSTRATE TEMPERATUREJ. Acta Physica Sinica, 1994, 43(8): 1311-1317. DOI: 10.7498/aps.43.1311
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LI DAI-QING, GONG BAO-AN, WAN YA, ZHU PEI-RAN, ZHOU JUN-SI, XU TIAN-BING, MU SHAN-MING, ZHAO QING-TAI, WANG ZHONG-LIE. STUDIES OF LATTICE DAMAGE CAUSED BY 1MeV Si+ IMPLANTATION INTO Al0.3Ga0.7As/GaAs SUPERLATTICES AND GaAs AT ELEVATED SUBSTRATE TEMPERATUREJ. Acta Physica Sinica, 1994, 43(8): 1311-1317. DOI: 10.7498/aps.43.1311
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Citation:
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LI DAI-QING, GONG BAO-AN, WAN YA, ZHU PEI-RAN, ZHOU JUN-SI, XU TIAN-BING, MU SHAN-MING, ZHAO QING-TAI, WANG ZHONG-LIE. STUDIES OF LATTICE DAMAGE CAUSED BY 1MeV Si+ IMPLANTATION INTO Al0.3Ga0.7As/GaAs SUPERLATTICES AND GaAs AT ELEVATED SUBSTRATE TEMPERATUREJ. Acta Physica Sinica, 1994, 43(8): 1311-1317. DOI: 10.7498/aps.43.1311
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