MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPY

LU FANG; JIANG JIA-YU; GONG DA-WEI; SUN HENG-HUI

doi:10.7498/aps.43.289

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LU FANG, JIANG JIA-YU, GONG DA-WEI, SUN HENG-HUI. MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPYJ. Acta Physica Sinica, 1994, 43(2): 289-296. DOI: 10.7498/aps.43.289

Citation:

LU FANG, JIANG JIA-YU, GONG DA-WEI, SUN HENG-HUI. MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPYJ. Acta Physica Sinica, 1994, 43(2): 289-296. DOI: 10.7498/aps.43.289

Citation:

LU FANG, JIANG JIA-YU, GONG DA-WEI, SUN HENG-HUI. MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPYJ. Acta Physica Sinica, 1994, 43(2): 289-296. DOI: 10.7498/aps.43.289