EFFECTS OF THE HIGH DENSITY CHARGED DEFECT STATES AT THE CuPc/InP INTERFACE ON RAMAN SCATTERING OF CuPc LB FILM

KONG XIANG-GUI; LIU YI-CHUN; E SHU-LIN

doi:10.7498/aps.43.809

Search

x

KONG XIANG-GUI, LIU YI-CHUN, E SHU-LIN. EFFECTS OF THE HIGH DENSITY CHARGED DEFECT STATES AT THE CuPc/InP INTERFACE ON RAMAN SCATTERING OF CuPc LB FILMJ. Acta Physica Sinica, 1994, 43(5): 809-815. DOI: 10.7498/aps.43.809

Citation:

KONG XIANG-GUI, LIU YI-CHUN, E SHU-LIN. EFFECTS OF THE HIGH DENSITY CHARGED DEFECT STATES AT THE CuPc/InP INTERFACE ON RAMAN SCATTERING OF CuPc LB FILMJ. Acta Physica Sinica, 1994, 43(5): 809-815. DOI: 10.7498/aps.43.809

Citation:

KONG XIANG-GUI, LIU YI-CHUN, E SHU-LIN. EFFECTS OF THE HIGH DENSITY CHARGED DEFECT STATES AT THE CuPc/InP INTERFACE ON RAMAN SCATTERING OF CuPc LB FILMJ. Acta Physica Sinica, 1994, 43(5): 809-815. DOI: 10.7498/aps.43.809