ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING

WANG XIAO-PING; ZHAO TE-XIU; LIU HONG-TU; SHI YI-SHENG; WENG HUI-MIN; GUO XUE-ZHE

doi:10.7498/aps.43.823

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WANG XIAO-PING, ZHAO TE-XIU, LIU HONG-TU, SHI YI-SHENG, WENG HUI-MIN, GUO XUE-ZHE. ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERINGJ. Acta Physica Sinica, 1994, 43(5): 823-828. DOI: 10.7498/aps.43.823

Citation:

WANG XIAO-PING, ZHAO TE-XIU, LIU HONG-TU, SHI YI-SHENG, WENG HUI-MIN, GUO XUE-ZHE. ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERINGJ. Acta Physica Sinica, 1994, 43(5): 823-828. DOI: 10.7498/aps.43.823

Citation:

WANG XIAO-PING, ZHAO TE-XIU, LIU HONG-TU, SHI YI-SHENG, WENG HUI-MIN, GUO XUE-ZHE. ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERINGJ. Acta Physica Sinica, 1994, 43(5): 823-828. DOI: 10.7498/aps.43.823