THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES

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XU ZHI-ZHONG. THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATESJ. Acta Physica Sinica, 1996, 45(1): 126-132. DOI: 10.7498/aps.45.126

Citation:

XU ZHI-ZHONG. THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATESJ. Acta Physica Sinica, 1996, 45(1): 126-132. DOI: 10.7498/aps.45.126

XU ZHI-ZHONG. THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATESJ. Acta Physica Sinica, 1996, 45(1): 126-132. DOI: 10.7498/aps.45.126

Citation:

XU ZHI-ZHONG. THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATESJ. Acta Physica Sinica, 1996, 45(1): 126-132. DOI: 10.7498/aps.45.126

THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES

XU ZHI-ZHONG

Acta Phys. Sin., 1996, 45(1): 126-132.

DOI: 10.7498/aps.45.126

CSTR: 32037.14.aps.45.126

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