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中国物理学会期刊
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WU ZHENG-YUN, HUANG QI-SHENG. THE METHOD OF FOCUSED Ga+ ION BEAM IMPLANTATION TO FABRICATE SEMICONDUCTOR QUANTUM WELL WIREJ. Acta Physica Sinica, 1996, 45(3): 486-490. DOI: 10.7498/aps.45.486
Citation: WU ZHENG-YUN, HUANG QI-SHENG. THE METHOD OF FOCUSED Ga+ ION BEAM IMPLANTATION TO FABRICATE SEMICONDUCTOR QUANTUM WELL WIREJ. Acta Physica Sinica, 1996, 45(3): 486-490. DOI: 10.7498/aps.45.486
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THE METHOD OF FOCUSED Ga+ ION BEAM IMPLANTATION TO FABRICATE SEMICONDUCTOR QUANTUM WELL WIRE

Acta Phys. Sin., 1996, 45(3): 486-490.
DOI: 10.7498/aps.45.486
CSTR: 32037.14.aps.45.486
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