DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs

CHEN KAI-MAO; JIN SI-XUAN; JIA YONG-QIANG; QIU SU-JUAN; LU YU-NAN; HE MEI-FEN; LIU HONG-FEI

doi:10.7498/aps.45.491

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CHEN KAI-MAO, JIN SI-XUAN, JIA YONG-QIANG, QIU SU-JUAN, LU YU-NAN, HE MEI-FEN, LIU HONG-FEI. DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAsJ. Acta Physica Sinica, 1996, 45(3): 491-498. DOI: 10.7498/aps.45.491

Citation:

CHEN KAI-MAO, JIN SI-XUAN, JIA YONG-QIANG, QIU SU-JUAN, LU YU-NAN, HE MEI-FEN, LIU HONG-FEI. DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAsJ. Acta Physica Sinica, 1996, 45(3): 491-498. DOI: 10.7498/aps.45.491

Citation:

CHEN KAI-MAO, JIN SI-XUAN, JIA YONG-QIANG, QIU SU-JUAN, LU YU-NAN, HE MEI-FEN, LIU HONG-FEI. DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAsJ. Acta Physica Sinica, 1996, 45(3): 491-498. DOI: 10.7498/aps.45.491