Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE

GUI QIAN; HUANG QI; CHEN HONG; ZHOU JUN-MING

doi:10.7498/aps.45.647

GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING. Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATEJ. Acta Physica Sinica, 1996, 45(4): 647-654. DOI: 10.7498/aps.45.647

Citation:

GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING. Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATEJ. Acta Physica Sinica, 1996, 45(4): 647-654. DOI: 10.7498/aps.45.647

Citation:

GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING. Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATEJ. Acta Physica Sinica, 1996, 45(4): 647-654. DOI: 10.7498/aps.45.647