CALCULATION OF CRITICAL LAYER THICKNESS BY  TAKING INTO ACCOUNT THE THERMAL STRAIN IN  Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURES

HUANG JING-YUN; YE ZHI-ZHEN; QUE DUAN-LIN

doi:10.7498/aps.46.2010

Search

x

HUANG JING-YUN, YE ZHI-ZHEN, QUE DUAN-LIN. CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURESJ. Acta Physica Sinica, 1997, 46(10): 2010-2014. DOI: 10.7498/aps.46.2010

Citation:

HUANG JING-YUN, YE ZHI-ZHEN, QUE DUAN-LIN. CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURESJ. Acta Physica Sinica, 1997, 46(10): 2010-2014. DOI: 10.7498/aps.46.2010

Citation:

HUANG JING-YUN, YE ZHI-ZHEN, QUE DUAN-LIN. CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURESJ. Acta Physica Sinica, 1997, 46(10): 2010-2014. DOI: 10.7498/aps.46.2010