THE FLUORESCENCE EMISSION FROM GaAs IN THE LAUE CASE NEAR THE ABSORPTION EDGE

XU ZHANG-CHENG; GUO CHANG-LIN; ZHAO ZONG-YAN; T.FUKAMACHI; R.NEGISHI; M.YOSHIZAWA; T.NAKAJIMA

doi:10.7498/aps.47.252

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XU ZHANG-CHENG, GUO CHANG-LIN, ZHAO ZONG-YAN, T.FUKAMACHI, R.NEGISHI, M.YOSHIZAWA, T.NAKAJIMA. THE FLUORESCENCE EMISSION FROM GaAs IN THE LAUE CASE NEAR THE ABSORPTION EDGEJ. Acta Physica Sinica, 1998, 47(2): 252-259. DOI: 10.7498/aps.47.252

Citation:

XU ZHANG-CHENG, GUO CHANG-LIN, ZHAO ZONG-YAN, T.FUKAMACHI, R.NEGISHI, M.YOSHIZAWA, T.NAKAJIMA. THE FLUORESCENCE EMISSION FROM GaAs IN THE LAUE CASE NEAR THE ABSORPTION EDGEJ. Acta Physica Sinica, 1998, 47(2): 252-259. DOI: 10.7498/aps.47.252

Citation:

XU ZHANG-CHENG, GUO CHANG-LIN, ZHAO ZONG-YAN, T.FUKAMACHI, R.NEGISHI, M.YOSHIZAWA, T.NAKAJIMA. THE FLUORESCENCE EMISSION FROM GaAs IN THE LAUE CASE NEAR THE ABSORPTION EDGEJ. Acta Physica Sinica, 1998, 47(2): 252-259. DOI: 10.7498/aps.47.252