DEEP ELECTRON STATES IN n-TYPE Al-DOPED ZnS1-xTex GROWN BY MOLECULAR BEAM EPITAXY

LU LI-WU; ZHANG YAN-HUA; GE WEI-KUN; I.K.SOU; Y.WANG; J.WANG; Z.H.MA; W.S.CHEN; G.K.L.WONG

doi:10.7498/aps.47.286

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LU LI-WU, ZHANG YAN-HUA, GE WEI-KUN, I.K.SOU, Y.WANG, J.WANG, Z.H.MA, W.S.CHEN, G.K.L.WONG. DEEP ELECTRON STATES IN n-TYPE Al-DOPED ZnS1-xTex GROWN BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1998, 47(2): 286-293. DOI: 10.7498/aps.47.286

Citation:

LU LI-WU, ZHANG YAN-HUA, GE WEI-KUN, I.K.SOU, Y.WANG, J.WANG, Z.H.MA, W.S.CHEN, G.K.L.WONG. DEEP ELECTRON STATES IN n-TYPE Al-DOPED ZnS1-xTex GROWN BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1998, 47(2): 286-293. DOI: 10.7498/aps.47.286

Citation:

LU LI-WU, ZHANG YAN-HUA, GE WEI-KUN, I.K.SOU, Y.WANG, J.WANG, Z.H.MA, W.S.CHEN, G.K.L.WONG. DEEP ELECTRON STATES IN n-TYPE Al-DOPED ZnS1-xTex GROWN BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1998, 47(2): 286-293. DOI: 10.7498/aps.47.286