STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING

LIU JIA-LU; ZHANG TING-QING; FENG JIAN-HUA; ZHOU GUAN-SHAN; YING MING-JIONG

doi:10.7498/aps.47.47

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LIU JIA-LU, ZHANG TING-QING, FENG JIAN-HUA, ZHOU GUAN-SHAN, YING MING-JIONG. STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALINGJ. Acta Physica Sinica, 1998, 47(1): 47-52. DOI: 10.7498/aps.47.47

Citation:

LIU JIA-LU, ZHANG TING-QING, FENG JIAN-HUA, ZHOU GUAN-SHAN, YING MING-JIONG. STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALINGJ. Acta Physica Sinica, 1998, 47(1): 47-52. DOI: 10.7498/aps.47.47

Citation:

LIU JIA-LU, ZHANG TING-QING, FENG JIAN-HUA, ZHOU GUAN-SHAN, YING MING-JIONG. STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALINGJ. Acta Physica Sinica, 1998, 47(1): 47-52. DOI: 10.7498/aps.47.47