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中国物理学会期刊
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YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN. Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1998, 47(6): 978-984. DOI: 10.7498/aps.47.978
Citation: YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN. Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1998, 47(6): 978-984. DOI: 10.7498/aps.47.978
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Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY

Acta Phys. Sin., 1998, 47(6): 978-984.
DOI: 10.7498/aps.47.978
CSTR: 32037.14.aps.47.978
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