KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA. THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND SiJ. Acta Physica Sinica, 1999, 48(11): 2104-2109. DOI: 10.7498/aps.48.2104
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Citation:
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KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA. THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND SiJ. Acta Physica Sinica, 1999, 48(11): 2104-2109. DOI: 10.7498/aps.48.2104
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KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA. THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND SiJ. Acta Physica Sinica, 1999, 48(11): 2104-2109. DOI: 10.7498/aps.48.2104
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Citation:
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KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA. THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND SiJ. Acta Physica Sinica, 1999, 48(11): 2104-2109. DOI: 10.7498/aps.48.2104
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