EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET

ZHANG TING-QING; LIU JIA-LU; LI JIAN-JUN; WANG JIAN-PING; ZHANG ZHENG-XUAN; XU NA-JUN; ZHAO YUAN-FU; HU YU-HONG

doi:10.7498/aps.48.2299

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ZHANG TING-QING, LIU JIA-LU, LI JIAN-JUN, WANG JIAN-PING, ZHANG ZHENG-XUAN, XU NA-JUN, ZHAO YUAN-FU, HU YU-HONG. EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFETJ. Acta Physica Sinica, 1999, 48(12): 2299-2303. DOI: 10.7498/aps.48.2299

Citation:

ZHANG TING-QING, LIU JIA-LU, LI JIAN-JUN, WANG JIAN-PING, ZHANG ZHENG-XUAN, XU NA-JUN, ZHAO YUAN-FU, HU YU-HONG. EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFETJ. Acta Physica Sinica, 1999, 48(12): 2299-2303. DOI: 10.7498/aps.48.2299

Citation:

ZHANG TING-QING, LIU JIA-LU, LI JIAN-JUN, WANG JIAN-PING, ZHANG ZHENG-XUAN, XU NA-JUN, ZHAO YUAN-FU, HU YU-HONG. EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFETJ. Acta Physica Sinica, 1999, 48(12): 2299-2303. DOI: 10.7498/aps.48.2299