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中国物理学会期刊
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REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORJ. Acta Physica Sinica, 2000, 49(7): 1241-1248. DOI: 10.7498/aps.49.1241
Citation: REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORJ. Acta Physica Sinica, 2000, 49(7): 1241-1248. DOI: 10.7498/aps.49.1241
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STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Acta Phys. Sin., 2000, 49(7): 1241-1248.
DOI: 10.7498/aps.49.1241
CSTR: 32037.14.aps.49.1241
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