STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFET

REN HONG-XIA; HAO YUE

doi:10.7498/aps.49.1683

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REN HONG-XIA, HAO YUE. STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFETJ. Acta Physica Sinica, 2000, 49(9): 1683-1688. DOI: 10.7498/aps.49.1683

Citation:

REN HONG-XIA, HAO YUE. STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFETJ. Acta Physica Sinica, 2000, 49(9): 1683-1688. DOI: 10.7498/aps.49.1683

Citation:

REN HONG-XIA, HAO YUE. STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFETJ. Acta Physica Sinica, 2000, 49(9): 1683-1688. DOI: 10.7498/aps.49.1683