STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER

WANG XIAO-DONG; LIU HUI-YUN; NIU ZHI-CHUAN; FENG SONG-LIN

doi:10.7498/aps.49.2230

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WANG XIAO-DONG, LIU HUI-YUN, NIU ZHI-CHUAN, FENG SONG-LIN. STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYERJ. Acta Physica Sinica, 2000, 49(11): 2230-2234. DOI: 10.7498/aps.49.2230

Citation:

WANG XIAO-DONG, LIU HUI-YUN, NIU ZHI-CHUAN, FENG SONG-LIN. STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYERJ. Acta Physica Sinica, 2000, 49(11): 2230-2234. DOI: 10.7498/aps.49.2230

Citation:

WANG XIAO-DONG, LIU HUI-YUN, NIU ZHI-CHUAN, FENG SONG-LIN. STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYERJ. Acta Physica Sinica, 2000, 49(11): 2230-2234. DOI: 10.7498/aps.49.2230