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中国物理学会期刊
GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, ZHOU HUI, GONG JIAN-CHENG, HAN FU-BIN, GUAN YING, WU GUO-RONG. STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYSJ. Acta Physica Sinica, 2001, 50(12): 2279-2283. DOI: 10.7498/aps.50.2279
Citation: GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, ZHOU HUI, GONG JIAN-CHENG, HAN FU-BIN, GUAN YING, WU GUO-RONG. STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYSJ. Acta Physica Sinica, 2001, 50(12): 2279-2283. DOI: 10.7498/aps.50.2279

STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS

CSTR: 32037.14.aps.50.2279
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