ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATUREJ. Acta Physica Sinica, 2001, 50(12): 2434-2438. DOI: 10.7498/aps.50.2434
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Citation:
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATUREJ. Acta Physica Sinica, 2001, 50(12): 2434-2438. DOI: 10.7498/aps.50.2434
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATUREJ. Acta Physica Sinica, 2001, 50(12): 2434-2438. DOI: 10.7498/aps.50.2434
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Citation:
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATUREJ. Acta Physica Sinica, 2001, 50(12): 2434-2438. DOI: 10.7498/aps.50.2434
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